Ni Silicide Schottky barrier tunnel FET for Low power device applications
Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation - ScienceDirect
Understanding contact gating in Schottky barrier transistors from 2D channels | Scientific Reports
A current-voltage model for double Schottky barrier devices
Schottky barrier - Wikipedia
Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact | ACS Applied Materials & Interfaces
半導體專題實驗 Fermi-Level Pinning & Schottky Barrier Height 蘇璟瑋、王騰漢 - ppt video online download
Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI: Impact of Barrier Lowering | Semantic Scholar
Schottky Diode
Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors | Scientific Reports
Nanomaterials | Free Full-Text | Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors
Frontiers | Schottky-Barrier-Dependent Electrical Characteristics in Conjugated Polymer Transistors With Various Contact Metals
Figure 2 from Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs | Semantic Scholar
Schottky Diode
Nanomaterials | Free Full-Text | Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors
Professor Robert B. Laughlin, Department of Physics, Stanford University
a) Schematic representing Schottky barrier lowering in a Schottky... | Download Scientific Diagram
An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts: AIP Advances: Vol 9, No 4
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Figure 1 from Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission | Semantic Scholar
Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs - ScienceDirect
Schottky Diode
Schottky barrier lowering due to interface states in 2D heterophase devices - Nanoscale Advances (RSC Publishing) DOI:10.1039/D0NA00795A
Solved = Consider an Al - n - Si Schottky barrier at T = 300 | Chegg.com
Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High‐Mobility MoS2 Field‐Effect Transistors - Chee - 2019 - Advanced Materials - Wiley Online Library
